IndiumV3, Chine, Analysis, bibRecord, 000D42

Simulation of a 1550 nm InGaAsP-InP transistor laser

Identifieur interne : 000D42 ( Chine/Analysis ); précédent : 000D41; suivant : 000D43

Simulation of a 1550 nm InGaAsP-InP transistor laser

Auteurs : RBID : Pascal:10-0268864

Descripteurs français

Pascal (Inist)
- Saturation optique, Laser puits quantique, Laser semiconducteur, Guide onde optique, Laser guide onde, Diode laser, Puits quantique multiple, Composé quaternaire, Gallium Arséniure, Indium Phosphure, Gallium Phosphure, Indium Arséniure, Composé binaire, Semiconducteur III-V, Profil dopage, InGaAsP, As Ga In P, In P, InP, 0130C, 4255P, 4279G.

English descriptors

KwdEn :
- Binary compounds, Doping profiles, Gallium Arsenides, Gallium Phosphides, III-V semiconductors, Indium Arsenides, Indium Phosphides, Laser diodes, Multiple quantum well, Optical saturation, Optical waveguides, Quantum well lasers, Quaternary compounds, Semiconductor lasers, Waveguide lasers.

Abstract

A 1550 InGaAsP-InP multiple-quantum-well (MQW) transistor laser is numerically modeled. The proposed structure has a deep-ridge waveguide and asymmetric doping profile in the base (i.e. only the part below QWs of the base is doped) which provides good optical and electrical confinement and effectively reduces the lateral leakage current and optical absorption. The important physical models and parameters are discussed and validated by modeling a conventional ridge-waveguide laser diode and comparing the results with the experiment. The simulation results of the transistor laser demonstrate a low threshold (< 10 mA) and a > 25 % slope efficiency with the current gain of 2 ∼ 4. The optical saturation and voltage-controlled operation are also demonstrated.

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Pascal:10-0268864

Le document en format XML

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<author><name>WEI SHI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of British Columbia</s1>
<s2>Vancouver, BC V6T 1Z4</s2>
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<country>Canada</country>
<wicri:noRegion>Vancouver, BC V6T 1Z4</wicri:noRegion>
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<author><name>ZIGANG DUAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University</s1>
<s2>Shenzhen 518060</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Shenzhen 518060</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Vafaei, Raha" uniqKey="Vafaei R">Raha Vafaei</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of British Columbia</s1>
<s2>Vancouver, BC V6T 1Z4</s2>
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<author><name sortKey="Rouger, Nicolas" uniqKey="Rouger N">Nicolas Rouger</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of British Columbia</s1>
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<author><name sortKey="Faraji, Behnam" uniqKey="Faraji B">Behnam Faraji</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of British Columbia</s1>
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<author><name sortKey="Chrostowski, Lukas" uniqKey="Chrostowski L">Lukas Chrostowski</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of British Columbia</s1>
<s2>Vancouver, BC V6T 1Z4</s2>
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<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Doping profiles</term>
<term>Gallium Arsenides</term>
<term>Gallium Phosphides</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>Laser diodes</term>
<term>Multiple quantum well</term>
<term>Optical saturation</term>
<term>Optical waveguides</term>
<term>Quantum well lasers</term>
<term>Quaternary compounds</term>
<term>Semiconductor lasers</term>
<term>Waveguide lasers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Saturation optique</term>
<term>Laser puits quantique</term>
<term>Laser semiconducteur</term>
<term>Guide onde optique</term>
<term>Laser guide onde</term>
<term>Diode laser</term>
<term>Puits quantique multiple</term>
<term>Composé quaternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Phosphure</term>
<term>Gallium Phosphure</term>
<term>Indium Arséniure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Profil dopage</term>
<term>InGaAsP</term>
<term>As Ga In P</term>
<term>In P</term>
<term>InP</term>
<term>0130C</term>
<term>4255P</term>
<term>4279G</term>
</keywords>
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<front><div type="abstract" xml:lang="en">A 1550 InGaAsP-InP multiple-quantum-well (MQW) transistor laser is numerically modeled. The proposed structure has a deep-ridge waveguide and asymmetric doping profile in the base (i.e. only the part below QWs of the base is doped) which provides good optical and electrical confinement and effectively reduces the lateral leakage current and optical absorption. The important physical models and parameters are discussed and validated by modeling a conventional ridge-waveguide laser diode and comparing the results with the experiment. The simulation results of the transistor laser demonstrate a low threshold (< 10 mA) and a > 25 % slope efficiency with the current gain of 2 ∼ 4. The optical saturation and voltage-controlled operation are also demonstrated.</div>
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<fC01 i1="01" l="ENG"><s0>A 1550 InGaAsP-InP multiple-quantum-well (MQW) transistor laser is numerically modeled. The proposed structure has a deep-ridge waveguide and asymmetric doping profile in the base (i.e. only the part below QWs of the base is doped) which provides good optical and electrical confinement and effectively reduces the lateral leakage current and optical absorption. The important physical models and parameters are discussed and validated by modeling a conventional ridge-waveguide laser diode and comparing the results with the experiment. The simulation results of the transistor laser demonstrate a low threshold (< 10 mA) and a > 25 % slope efficiency with the current gain of 2 ∼ 4. The optical saturation and voltage-controlled operation are also demonstrated.</s0>
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<fC03 i1="10" i2="3" l="FRE"><s0>Indium Phosphure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Indium Phosphides</s0>
<s2>NC</s2>
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<fC03 i1="12" i2="3" l="ENG"><s0>Indium Arsenides</s0>
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<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>75</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>In P</s0>
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<s5>76</s5>
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<s5>83</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>0130C</s0>
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<s5>84</s5>
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<s4>INC</s4>
<s5>91</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>4279G</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>172</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
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Simulation of a 1550 nm InGaAsP-InP transistor laser

Simulation of a 1550 nm InGaAsP-InP transistor laser

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

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